| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive-type resist composition which causes no pattern fall not only in ordinary exposure (dry exposure) but also in liquid immersion exposure, cancels a trade-off relation, is broad in exposure latitude and reduces line edge roughness, and to provide a pattern-forming method using the positive-type resist composition. <P>SOLUTION: The positive-type resist composition contains: a specific compound which generates a sulfonic acid, which has ester structure and a fluorine atom, by the radiation of active beams or radiation; and a resin which is 150°C or below in glass transition temperature and increases its solubility in an alkali developer due to the action of an acid. The pattern-forming method is also provided using the positive-type resist composition. <P>COPYRIGHT: (C)2010,JPO&INPIT |
