OXIDE SEMICONDUCTOR FILM, TRANSISTOR, AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: An oxide semiconductor layer, a transistor, and a semiconductor device are provided to obtain stable electrical properties by using a semiconductor layer as a channel formation region. CONSTITUTION: A determination part has a c axis on the surface of an oxide semiconductor layer. The c axis is approximately vertical to the surface. The determination part includes a crystal arrangement part. A crystal arrangement part contains indium atoms and oxygen atoms. The length of the crystal arrangement part is 1.5 nm or more.