| 摘要 |
PURPOSE: A laser diode structure and a manufacturing method thereof are provided to prevent degradation of breakdown voltage by using a tunnel effect. CONSTITUTION: A laser diode is provided by applying a window structure, and composed of a form which distributes impurities restrictively in a partial area of an active layer. The width X of a distribution area of impurities is satisfied with Y <= X <= 2Y (X: the width of the distribution area of impurities, Y: the width of the area of current injection), and the centers of X and Y are set up to correspond to each other. The laser diode is composed of ZnSiO2, which is 300-700 Å in thickness, on a current injection area and around the current injection area; and provided with a cutoff area of the impurities on the periphery of the current injection area outside the current injection area. |
