发明名称 |
Method of forming through-substrate vias |
摘要 |
<p>Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via comprises the hole and the first metal.</p> |
申请公布号 |
EP2436031(B1) |
申请公布日期 |
2013.09.25 |
申请号 |
EP20100716541 |
申请日期 |
2010.04.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WEBB, BUCKNELL;COTTE, JOHN, MICHAEL;JAHNES, CHRISTOPHER, VINCENT |
分类号 |
H01L21/768;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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