发明名称 Method of forming through-substrate vias
摘要 <p>Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via comprises the hole and the first metal.</p>
申请公布号 EP2436031(B1) 申请公布日期 2013.09.25
申请号 EP20100716541 申请日期 2010.04.29
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 WEBB, BUCKNELL;COTTE, JOHN, MICHAEL;JAHNES, CHRISTOPHER, VINCENT
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
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