发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
摘要 The invention provides a positive resist composition for the pattern formation by the use of actinic rays or radiation, ensuring that the sensitivity, resolution and pattern profile are good, the line edge roughness is small and the surface roughness is satisfied, and a pattern forming method using the composition, wherein the positive resist composition is a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (B) a resin of which solubility in an alkali developer increases under the action of an acid, the resin comprising a specific repeating unit which is a substituted polystyrene derivative having a lactone structure; and a pattern forming method using the composition.
申请公布号 KR101311248(B1) 申请公布日期 2013.09.25
申请号 KR20060026007 申请日期 2006.03.22
申请人 发明人
分类号 G03F7/004;G03F7/039 主分类号 G03F7/004
代理机构 代理人
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