| 摘要 |
PROBLEM TO BE SOLVED: To shorten time and to reduce cost which formation of a cap layer takes, thereby to provide a method of manufacturing a substrate for an oxide superconductor which can manufacture an oxide superconductor with sufficient productivity, to provide a method of manufacturing an oxide superconductor, and to provide a device for forming a cap layer for an oxide superconductor used by each manufacturing method. SOLUTION: In the method of manufacturing the substrate for the oxide superconductor, a reactivity DC sputtering method using metal targets 14a, 15a is used as a method of forming cap layer on an IBAD substrate 7. A cap layer to be formed is for example, is a CeO<SB>2</SB>layer. When a cap layer is formed, two or more metal targets 14a, 15a are prepared along a run system 11, and it is desirable to establish the temperature of the IBAD substrate 7 and the oxygen concentration of a gas introduced into a deposition space in a predetermined range. COPYRIGHT: (C)2010,JPO&INPIT
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