NONVOLATILE MEMORY DEVICE AND READING METHOD OF NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A non-volatile memory device and a reading method of the non-volatile memory device improve the speed of reading information by reading information from multiple memory cells together connected to one bit line. CONSTITUTION: A bias voltage is applied to a bit line connected to multiple memory cells (S110). A selected read voltage is applied to word lines connected to at least two selected memory cells and an unselected read voltage is applied to word lines connected to the remaining unselected memory cells (S120). At least two selected memory cells are read together according to the change of the voltage of a bit line (S130).