METHOD OF FABRICATING HIGH EFFICIENCY LIGHT EMITTING DIODE

摘要

PURPOSE: A method for manufacturing a light emitting diode of high efficiency is provided to improve the light extraction efficiency of the light emitting diode by using a transparent oxide layer with an uneven pattern. CONSTITUTION: A GaN layer (13) and a sacrificial layer (15) are formed on a GaN substrate (11). The sacrificial layer is composed of a GaN semiconductor whose bandgap is narrower than the bandgap of the GaN layer. A semiconductor laminate structure (30) is formed by growing the GaN semiconductor layers on the sacrificial layer. A groove (30a) passing through the semiconductor laminate structure and the sacrificial layer is formed. A support substrate is formed on the semiconductor laminate structure. The GaN substrate is separated from the semiconductor laminate structure by etching the sacrificial layer.