| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride crystal having a practical size, with use of no complicated processes and no expensive reactor, without making the crystal size small. SOLUTION: The method of manufacturing a group III nitride substrate is carried out by growing the group III nitride crystal from a melt containing at least a group III metal, a flux and a nitrogen raw material in the reactor having a pressure higher than the atmospheric pressure, and manufacturing the substrate from the crystal. The manufacturing method comprises a process of setting a seed crystal of a group III nitride in the reactor; a process of supplying the nitrogen raw material from the outside of the reactor during growing of the crystal; a process of growing the group III nitride crystal with respect to the seed crystal; and a process of manufacturing the group III nitride substrate by cutting the group III nitride crystal. COPYRIGHT: (C)2011,JPO&INPIT
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