| 摘要 |
A method for manufacturing an ohm contact to InP and GaAs comprises cleaning a plate, to which the following layers in vacuum in extend of one process cycle are sputtered: gold, germanium, borides refractory metal nitride and external gold layer; thereafter in inert atmosphere the rapid thermal annealing of all structure is performed. First, a gold layer is sputtered, then, germanium layer, layers of the same thickness, the total thickness thereof is 40-60 nm, thickness of borides layer or refractory metal layer nitride is 100-200 nm; rapid annealing is performed under the temperature of 410-440 °C during 10-30 s. |
