A PLASMA PROTECTION DIODE FOR A HEMT DEVICE

摘要

PURPOSE: A plasma protection diode for a high electron mobility transistor device is provided to improve performance by effectively preventing damage caused by plasma. CONSTITUTION: A III-V group compound layer (60) is formed on a silicon substrate (40). A device is formed in at least one part of the III-V group compound layer. A diode (130) is formed in a silicon substrate. The diode is electrically combined with a contact pad. The contact pad is arranged on the device. [Reference numerals] (AA) Ion injection process