| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve throughput by using nitride semiconductor. CONSTITUTION: A nitride semiconductor layer is formed on a substrate. A first insulating layer (31) is formed on the nitride semiconductor layer. A second insulating layer (32) is formed on the first insulating layer. A gate electrode (41) is formed on the second insulating layer. A source electrode and a drain electrode are formed on the nitride semiconductor layer. [Reference numerals] (AA) Structure drawing of a semiconductor about a first embodiment |
