| 摘要 |
To shorten the time required for bonding conductor films containing high melting point metals containing, for example, Cu as the main component using a low melting point metal containing, for example, Sn as the main component. A heat bonding process is carried out in a state where low melting point metal layers (16 and 18) containing low melting point metals containing, for example, Sn as the main component in such a manner as to sandwich, in the thickness direction, a high melting point metal layer (17) containing a high melting point metal containing, for example, Cu as the main component which is the same as high melting point metals constituting first and second conductor films (13 and 14) to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers (16 and 18) can be shortened. Thus, the time required for the diffusion can be shortened, and thus the time required for the bonding can be shortened. |
