| 摘要 |
The invention relates to semiconductor technology. An installation for growing nano-heteroepitaxial structures with quantum points of liquid phase comprises a vertical quartz reactor with upper and low covers, in the center of low cover a stock rotatable around own axis is positioned. At the stock a graphite cassette is mounted, the cassette has holes for containers comprising sliders with s and substrates, also containers with different solutions-melts. Two another stocks passing through a low cover of the reactor, make it possible movement along the reactor axis. The upper part of cylinder is fixed in a device positioning on the reactor upper cover, which enables rotation of the cylinder around its axis for removing rests of the solution-melt on the working surface of substrate. Inside of the cylinder a container for regulating heat carrier is located, and a heat carrier capable of movement along the cylinder axis and substrate back surface towards and backwards the container. The technical result of the invention is increase of parameter precision of the nanolayers obtained, the nanolayers quality, the growing process can be performed uninterruptible. |
