SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND PROCESS FOR PRODUCING THE SAME

摘要

Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, within a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30 %.