RESISTIVE MEMORY DEVICE AND DATA WRITE METHOD THEREOF

摘要

PURPOSE: A resistive memory device and a data writing method thereof reduce the resistance distribution of a programmed memory cell by controlling the limited current according to a read resistance value of the memory cell while operating a program. CONSTITUTION: A resistive memory device includes a resistive memory cell and a reading and writing circuit (140). The reading and writing circuit programs reads out the resistive memory cell from a first state to a second state. The reading and writing circuit reads a resistance value of the resistive memory cell in the first state and controls the limited current provided to the resistive memory cell during a programming process according to the read resistance value.