发明名称 |
Method of manufacturing laterally graded porous silicon optical filter through diffusion-limited etching and filter structure manufactured thereby |
摘要 |
Disclosed herein is a method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching. The change in resonance frequency of the porous silicon layer in a taper axis direction is adjusted using the diffusion of reactive ions in an etchant under conditions of use of a related etch mask pattern. It is possible to manufacture an optical band-pass filter having a resonance frequency that linearly changes using a tapered etch window opening.
|
申请公布号 |
US8540862(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US20080192199 |
申请日期 |
2008.08.15 |
申请人 |
JEON HEON SU;HWANG KYUNG WOOK;SAMSUNG ELECTRONICS CO., LTD.;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
JEON HEON SU;HWANG KYUNG WOOK |
分类号 |
C25F3/12 |
主分类号 |
C25F3/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|