发明名称 Method of manufacturing laterally graded porous silicon optical filter through diffusion-limited etching and filter structure manufactured thereby
摘要 Disclosed herein is a method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching. The change in resonance frequency of the porous silicon layer in a taper axis direction is adjusted using the diffusion of reactive ions in an etchant under conditions of use of a related etch mask pattern. It is possible to manufacture an optical band-pass filter having a resonance frequency that linearly changes using a tapered etch window opening.
申请公布号 US8540862(B2) 申请公布日期 2013.09.24
申请号 US20080192199 申请日期 2008.08.15
申请人 JEON HEON SU;HWANG KYUNG WOOK;SAMSUNG ELECTRONICS CO., LTD.;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION 发明人 JEON HEON SU;HWANG KYUNG WOOK
分类号 C25F3/12 主分类号 C25F3/12
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