发明名称 |
Resistance variable memory cell structures and methods |
摘要 |
Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.
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申请公布号 |
US8541765(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US20100787018 |
申请日期 |
2010.05.25 |
申请人 |
MARSH EUGENE P.;QUICK TIMOTHY A.;MICRON TECHNOLOGY, INC. |
发明人 |
MARSH EUGENE P.;QUICK TIMOTHY A. |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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