发明名称 |
Semiconductor field effect power switching device |
摘要 |
A semiconductor device having a semiconductor body, a source metallization arranged on a first surface of the semiconductor body and a trench including a first trench portion and a second trench portion and extending from the first surface into the semiconductor body is provided. The semiconductor body further includes a pn-junction formed between a first semiconductor region and a second semiconductor region. The first trench portion includes an insulated gate electrode which is connected to the source metallization, and the second trench portion includes a conductive plug which is connected to the source metallization and to the second semiconductor region.
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申请公布号 |
US8541837(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US201213461198 |
申请日期 |
2012.05.01 |
申请人 |
HIRLER FRANZ;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ |
分类号 |
H01L29/66;H01L29/772;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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