发明名称 |
Super-self-aligned contacts and method for making the same |
摘要 |
A number of first hard mask portions are formed on a dielectric layer to vertically shadow a respective one of a number of underlying gate structures. A number of second hard mask filaments are formed adjacent to each side surface of each first hard mask portion. A width of each second hard mask filament is set to define an active area contact-to-gate structure spacing. A first passage is etched between facing exposed side surfaces of a given pair of neighboring second hard mask filaments and through a depth of the semiconductor wafer to an active area. A second passage is etched through a given first hard mask portion and through a depth of the semiconductor wafer to a top surface of the underlying gate structure. An electrically conductive material is deposited within both the first and second passages to respectively form an active area contact and a gate contact.
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申请公布号 |
US8541879(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US20070956305 |
申请日期 |
2007.12.13 |
申请人 |
SMAYLING MICHAEL C.;TELA INNOVATIONS, INC. |
发明人 |
SMAYLING MICHAEL C. |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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