发明名称 |
3D integrated circuit and method of manufacturing the same |
摘要 |
The present invention provides a 3D integrated circuit and a manufacturing method thereof. The circuit structure comprises: a semiconductor substrate; at least one semiconductor device formed on the upper surface of the semiconductor substrate; a through-Si-via through the semiconductor substrate and comprising an insulating layer covering sidewalls of the through-Si-via and conductive material filled in the insulating layer; an interconnection structure connecting the at least one semiconductor device and the through-Si-via; and a diffusion trapping region formed on the lower surface of the semiconductor substrate. The present invention is applicable in manufacture of the 3D integrated circuit.
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申请公布号 |
US8541305(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US201013003744 |
申请日期 |
2010.09.19 |
申请人 |
ZHU HUILONG;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
ZHU HUILONG |
分类号 |
H01L23/48;H01L21/322;H01L21/44 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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