发明名称 Method of manufacturing semiconductor device, semiconductor device thus manufactured, and semiconductor manufacturing apparatus
摘要 A plurality of projections, respectively given later as cores of a plurality of external connection terminals, are formed first by selectively forming a curable resin layer over a protective insulating film; flat portions are then formed respectively on the top surfaces of the plurality of projections, by pressing a molding jig having a flat opposing surface onto the top surfaces of the plurality of projections, before the projections are cured; the plurality of projections are cured; and the plurality of external connection terminals, and the plurality of interconnects are formed, by selectively forming an electro-conductive film over the plurality of projections, the protective insulating film, and the plurality of electrode pads.
申请公布号 US8541300(B2) 申请公布日期 2013.09.24
申请号 US20100801367 申请日期 2010.06.04
申请人 BEKKU FUMIHIRO;RENESAS ELECTRONICS CORPORATION 发明人 BEKKU FUMIHIRO
分类号 H01L23/498 主分类号 H01L23/498
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