发明名称 Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus
摘要 A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
申请公布号 US8541878(B2) 申请公布日期 2013.09.24
申请号 US201113050338 申请日期 2011.03.17
申请人 TAKAHASHI HIROSHI;SUKEGAWA SHUNICHI;INOUE KEISHI;SONY CORPORATION 发明人 TAKAHASHI HIROSHI;SUKEGAWA SHUNICHI;INOUE KEISHI
分类号 H01L23/485 主分类号 H01L23/485
代理机构 代理人
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