发明名称 |
Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus |
摘要 |
A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via. |
申请公布号 |
US8541878(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US201113050338 |
申请日期 |
2011.03.17 |
申请人 |
TAKAHASHI HIROSHI;SUKEGAWA SHUNICHI;INOUE KEISHI;SONY CORPORATION |
发明人 |
TAKAHASHI HIROSHI;SUKEGAWA SHUNICHI;INOUE KEISHI |
分类号 |
H01L23/485 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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