High performance dielectric stack for DRAM capacitor
摘要
A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.
申请公布号
US8541283(B2)
申请公布日期
2013.09.24
申请号
US201313830282
申请日期
2013.03.14
申请人
INTERMOLECULAR, INC.;ELPIDA MEMORY, INC;ELPIDA MEMORY, INC.