发明名称 |
Method and apparatus for manufacturing magnetoresistive devices |
摘要 |
Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching.
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申请公布号 |
US8540852(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US20060991967 |
申请日期 |
2006.09.13 |
申请人 |
WATANABE NAOKI;KODAIRA YOSHIMITSU;DJAYAPRAWIRA DAVID D.;MAEHARA HIROKI;CANON ANELVA CORPORATION |
发明人 |
WATANABE NAOKI;KODAIRA YOSHIMITSU;DJAYAPRAWIRA DAVID D.;MAEHARA HIROKI |
分类号 |
C23F1/10 |
主分类号 |
C23F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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