发明名称 Method of forming epitaxial film
摘要 A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
申请公布号 US8541294(B2) 申请公布日期 2013.09.24
申请号 US201213487592 申请日期 2012.06.04
申请人 PAN ERIC TING-SHAN;ATHENAEUM LLC 发明人 PAN ERIC TING-SHAN
分类号 H01L21/00 主分类号 H01L21/00
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