| 摘要 |
The present invention relates to a magnetic memory cell, which controls the magnetization direction of the free magnetic layer of a Magnetic Tunnel Junction (MTJ) device using a spin torque transfer, and enables the implementation of a magnetic logic circuit, in which memory and logic circuit functions are integrated. The magnetic memory cell includes an MTJ device (10) including a top electrode (11) and a bottom electrode (13), which are provided to allow current to flow therethrough, and a fixed layer (15) and a free layer (17), which are magnetic layers respectively deposited on a top and a bottom of an insulating layer (19), required to insulate the top and bottom electrodes from each other. A current control circuit (50) controls a flow of current flowing between the top and bottom electrodes, and changes a magnetization direction of the free layer according to an input logic level.
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