发明名称 Backside illumination CMOS image sensors and methods of manufacturing the same
摘要 Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.
申请公布号 US8541857(B2) 申请公布日期 2013.09.24
申请号 US20110984404 申请日期 2011.01.04
申请人 AHN JUNG-CHAK;LEE KYUNG-HO;SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN JUNG-CHAK;LEE KYUNG-HO
分类号 H01L31/18 主分类号 H01L31/18
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