发明名称 Semiconductor devices and semiconductor device manufacturing methods
摘要 Semiconductor devices and semiconductor device manufacturing methods. The semiconductor device manufacturing methods may form a memory cell having a silicon on insulator (SOI) structure only in one or more localized regions of a bulk semiconductor substrate by use selective etching. Accordingly, a different bias voltage may be applied to a peripheral device than to a memory cell having the SOI structure.
申请公布号 US8541841(B2) 申请公布日期 2013.09.24
申请号 US201213412248 申请日期 2012.03.05
申请人 KIM WON-JOO;CHOI SANG-MOO;LEE TAE-HEE;PARK YOON-DONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM WON-JOO;CHOI SANG-MOO;LEE TAE-HEE;PARK YOON-DONG
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
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