发明名称 |
Semiconductor devices and semiconductor device manufacturing methods |
摘要 |
Semiconductor devices and semiconductor device manufacturing methods. The semiconductor device manufacturing methods may form a memory cell having a silicon on insulator (SOI) structure only in one or more localized regions of a bulk semiconductor substrate by use selective etching. Accordingly, a different bias voltage may be applied to a peripheral device than to a memory cell having the SOI structure.
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申请公布号 |
US8541841(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US201213412248 |
申请日期 |
2012.03.05 |
申请人 |
KIM WON-JOO;CHOI SANG-MOO;LEE TAE-HEE;PARK YOON-DONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WON-JOO;CHOI SANG-MOO;LEE TAE-HEE;PARK YOON-DONG |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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