发明名称 |
Enhanced densification of silicon oxide layers |
摘要 |
Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.
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申请公布号 |
US8541053(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US201113178057 |
申请日期 |
2011.07.07 |
申请人 |
MENEZES MARLON;XU FRANK Y.;WAN FEN;MOLECULAR IMPRINTS, INC. |
发明人 |
MENEZES MARLON;XU FRANK Y.;WAN FEN |
分类号 |
B05D3/02;B05D3/04;B32B3/26 |
主分类号 |
B05D3/02 |
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