GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE

摘要

PURPOSE: A GaN-based light emitting diode is provided to implement light of high luminous intensity and to increase a light emission area by forming an active layer with a 3D structure. CONSTITUTION: A first GaN-based semiconductor layer (27) is formed on a GaN substrate (21). The GaN substrate includes a concave part and a convex part (21a). The convex part is arranged with a matrix shape or a honeycomb shape. A second GaN-based semiconductor layer (31) is formed on the first GaN-based semiconductor layer. An active layer (29) is located between the first GaN-based semiconductor layer and the second GaN-based semiconductor layer. The active layer includes a bottom part, a ceiling part, and a connection part which connects the bottom part to the ceiling part.