| 摘要 |
<p>PURPOSE: A shielded gate MOSFET with a funnel-shaped trench is provided to reduce a cell pitch or the size of a device with performance indexes of relatively low specific gains. CONSTITUTION: A funnel-shaped trench (110) has a flared edge (120) which is etched on a semiconductor substrate (190). A trench opening part (101) which is located on the surface of the semiconductor substrate is wider than the inner opening part of a trench body (112). The flared edge is extended between the trench opening part and the inner opening part of the trench body. A source region (150), a gate region (170), and a drain region (160) are formed on the semiconductor substrate. A gate electrode (172) is arranged on a gate oxide layer which is formed on the flared edge. [Reference numerals] (190) Semiconductor substrate</p> |
