| 摘要 |
PURPOSE: A method for manufacturing a semiconductor nanowire and a thermoelectric wire including the semiconductor nanowire manufactured by the same are provided to easily control the irregularity of the semiconductor nanowire and to control the diameter of the semiconductor nanowire with a top-down method. CONSTITUTION: A semiconductor substrate is provided (S1). A polymer nanobead is arranged on the semiconductor substrate (S2). The size of the polymer nanobead is reduced (S3). A metal mask is formed on the front side of the semiconductor substrate by depositing metal (S4). The polymer nanobead is removed (S5). The semiconductor substrate is etched by using the metal mask (S6). A nanowire is formed on the semiconductor substrate by removing the metal mask (S7). [Reference numerals] (AA) Semiconductor substrate with a semiconductor nanowire manufacturing; (S1) Semiconductor substrate is provided; (S2) Polymer nanobead is arranged on the semiconductor substrate; (S3) Size of the polymer nanobead is reduced; (S4) Metal mask is formed on the front side of the semiconductor substrate by depositing metal; (S5) Polymer nanobead is removed; (S6) Semiconductor substrate is etched by using the metal mask; (S7) Metal mask is removed |
