| 摘要 |
PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof form a MgxNy layer on a first p-type 3 group nitride layer, obtaining a nitride semiconductor having a high hole concentration. CONSTITUTION: A first p-type 3 group nitride layer (150) is located on an n-type 3 group nitride layer (130). A MQW (Multiple Quantum Well) (140) comprises an active layer. The active layer is formed between the n-type 3group nitride layer and the first p-type 3 group nitride layer. A MgxNy layer (160) is formed on the upper side of the first p-type 3 group nitride layer. A second p-type 3 group nitride layer (170) is formed on the upper side of the MgxNy layer. |
