DUMMY STRUCTURE FOR MULTIPLE GATE DIELECTRIC INTERFACE AND METHODS

摘要

PURPOSE: A dummy structure for a multiple gate dielectric interface and a manufacturing method thereof are provided to remove an interface defect between a high voltage gate dielectric and a low voltage gate dielectric by forming a dummy structure between a high voltage region and a low voltage region of a substrate. CONSTITUTION: A high voltage gate dielectric (22) is formed on a high voltage region (12) of a substrate (10). A low voltage gate dielectric (28) is formed on a low voltage region (14) of the substrate. A dummy structure (32) is formed on the upper surface of the high voltage gate dielectric. The low voltage gate dielectric is thinner than the high voltage gate dielectric. The dummy structure is located on the sidewall of the high voltage gate dielectric.