FINFET DEVICE HAVING A STRAINED REGION

摘要

PURPOSE: A FinFET device with a strained region is provided to improve the performance of a transistor with carrier mobility by providing a tensile strain to a channel region. CONSTITUTION: A semiconductor substrate is provided (202). An injection process is performed (204). A buffer layer is formed on the semiconductor substrate (206). A stress film is formed on the semiconductor substrate (208). A stress induction or transmission process is performed (210). A stress film and/or a buffer layer are separated from the semiconductor substrate (212). A junction is formed by performing source and drain injection processes (214). [Reference numerals] (202) Semiconductor substrate is provided; (204) Injection process is performed; (206) Buffer layer is formed on the semiconductor substrate; (208) Stress film is formed on the semiconductor substrate; (210) Stress induction process is performed; (212) Stress film and a buffer layer are separated from the semiconductor substrate; (214) Junction is formed by performing source and drain injection processes