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发明名称
一种用来制造半导体装置的方法
摘要
本发明系揭露一种半导体装置的制造方法。先提供半导体基材(如裸矽),并在半导体基材上形成介电层。藉由移除部分介电层,可在介电层中提供开口。共形之第一导电层乃形成于介电层与开口上,共形之第二导电层乃形成于第一导电层上,共形之阻障层乃形成于第二导电层上。
申请公布号
TWI409880
申请公布日期
2013.09.21
申请号
TW097132710
申请日期
2008.08.27
申请人
旺宏电子股份有限公司 新竹市新竹科学工业园区力行路16号
发明人
骆统;苏金达;杨大弘;陈光钊
分类号
H01L21/31;H01L21/768
主分类号
H01L21/31
代理机构
代理人
李贵敏 台北市内湖区民权东路6段109号2楼之1
主权项
地址
新竹市新竹科学工业园区力行路16号
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