| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor layer in which the occurrence of cracks is suppressed.SOLUTION: There is provided a method of manufacturing a nitride semiconductor layer including the steps of: forming a first lower layer, on a primary surface of a substrate, having a first lattice spacing of a first axis parallel to the primary surface and composed of a nitride semiconductor; forming a first upper layer, on the first lower layer, having a second lattice spacing larger than the first lattice spacing, in which at least a part of the layer has compression strain, and composed of the nitride semiconductor; and forming a first stack including the first lower layer and the first upper layer. The absolute value of the ratio of the difference between the second lattice spacing and the first lattice spacing with respect to the first lattice spacing is 0.005 or more to 0.019 or less. The formation of the first upper layer includes: further increasing the growth rate of the first upper layer in a direction parallel to the primary surface than the growth rate of the first upper layer in a direction perpendicular to the primary surface; and forming the first upper layer while applying the compression stress on the basis of the difference between the second lattice spacing and the first lattice spacing to the first upper layer. |
