SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To inhibit an occurrence of damages to an element formed on a semiconductor substrate; and enable wiring for high-frequency connection to be formed through the semiconductor substrate in a state where a multilayer interconnection can be formed easier.SOLUTION: A semiconductor device forming method comprises: forming an etching stop layer 102 on a surface of a semiconductor substrate 101; forming wiring 103 on the etching stop layer 102; forming first through wiring 103a which pierces the etching stop layer 102 and is connected to the wiring 103; and subsequently forming a substrate through hole 101b from a rear face side of the semiconductor substrate 101 to reach the etching stop layer 102.