发明名称 INTEGRATED PROCESSING AND CRITICAL POINT DRYING SYSTEMS FOR SEMICONDUCTOR AND MEMS DEVICES
摘要 Processing and drying of a sample, such as a semiconductor or MEMS device, is achieved using a single pressure chamber. The pressure chamber holds the sample in a sealed interior volume throughout various process steps, such as, but not limited to, photoresist removal, sacrificial layer etching, flushing or rinsing, dehydration, and critical point drying. The pressure chamber is constructed of a chemically-resistant and pressure-resistant material to withstand the various chemicals and pressures that are encountered in the various process and drying steps. For example, the pressure chamber is constructed from a nickel-copper alloy. Automated release etching and critical point drying of a MEMS or semiconductor device is provided without removing the device from the sealed pressure chamber.
申请公布号 US2013239996(A1) 申请公布日期 2013.09.19
申请号 US201313874953 申请日期 2013.05.01
申请人 TOUSIMIS ANASTASIOS J. 发明人 TOUSIMIS ANASTASIOS J.
分类号 B08B3/08 主分类号 B08B3/08
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