发明名称 |
GROWING AN IMPROVED P-GAN LAYER OF AN LED THROUGH PRESSURE RAMPING |
摘要 |
The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region.
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申请公布号 |
US2013240831(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201213418663 |
申请日期 |
2012.03.13 |
申请人 |
LO MING-HUA;LI ZHEN-YU;HSIA HSING-KUO;KUO HAO-CHUNG;TSMC SOLID STATE LIGHTING, LTD. |
发明人 |
LO MING-HUA;LI ZHEN-YU;HSIA HSING-KUO;KUO HAO-CHUNG |
分类号 |
H01L33/06;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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