发明名称 |
Use of Band Edge Gate Metals as Source Drain Contacts |
摘要 |
A device includes a gate stack formed over a channel in a semiconductor substrate. The gate stack includes a layer of gate insulator material, a layer of gate metal overlying the layer of gate insulator material, and a layer of contact metal overlying the layer band edge gate metal. The device further includes source and drain contacts adjacent to the channel. The source and drain contacts each include a layer of the gate metal that overlies and is in direct electrical contact with a doped region of the semiconductor substrate, and a layer of contact metal that overlies the layer of gate metal.
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申请公布号 |
US2013241008(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201213611736 |
申请日期 |
2012.09.12 |
申请人 |
CHOI KISIK;LAVOIE CHRISTIAN;SOLOMON PAUL M.;YANG BIN;ZHANG ZHEN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHOI KISIK;LAVOIE CHRISTIAN;SOLOMON PAUL M.;YANG BIN;ZHANG ZHEN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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