LIGHT-EMITTING DIODE

摘要

The invention relates to lighting engineering, and specifically to semiconductor light sources, preferably to light-emitting diodes with white light emission. A light-emitting diode with white light emission comprises a light-emitting element 1 with blue or ultraviolet light emission formed on an InGaN crystal and coated on the outside with a layer 2 of transparent gel applied directly to the light-emitting element 1. In order to increase the output of radiation from the light-emitting element 1, the layer 2 is designed to have a refractive index of k=k1>1.4 which is as close as possible to the refractive index k=k2 of the light-emitting element, where the difference in values is k2-k1=min. Moreover, the application of the layer of transparent gel directly to the light-emitting element makes it possible to increase the output of radiation from the crystal. An aspherical lens consisting of a gel-phosphor mix with parameters ensuring the production of uniform white light emission with the same colour temperature irrespective of the viewing angle of the light-emitting diode radiation is mounted on the outside of the transparent gel. The light-emitting diode has increased intensity of the white light emission by virtue of a reduction in losses due to angular chromaticity distortions, in the optical elements of said light-emitting diode and at the optical transitions of said optical elements.