发明名称 |
NONVOLATILE VARIABLE RESISTANCE ELEMENT AND METHOD OF MANUFACTURING THE NONVOLATILE VARIABLE RESISTANCE ELEMENT |
摘要 |
According to one embodiment, a first electrode, a second electrode, and a variable resistance layer are provided. The variable resistance layer is arranged between the first electrode and the second electrode and contains a polycrystalline semiconductor as a main component.
|
申请公布号 |
US2013240825(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201113825688 |
申请日期 |
2011.02.28 |
申请人 |
FUJII SHOSUKE;MATSUSHITA DAISUKE;KAWAI TOMOYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJII SHOSUKE;MATSUSHITA DAISUKE;KAWAI TOMOYA |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|