SYSTEM AND APPARATUS FOR DRIVER CIRCUIT FOR PROTECTION OF GATES OF GaN FETS

摘要

A half-bridge power circuit (300) comprises a first gallium nitride field effect transistor (GaN FET) (320); a first driver coupled (360) to a gate of the first GaN FET; an anode of a capacitor coupled to an output of the driver (350) and a source of the first GaN FET; a diode (370) having a cathode coupled to the cathode of the capacitor; and a bootstrap capacitor clamp (BCC) controller, including: a field effect transistor (FET) (380) coupled to an anode of the diode, and a comparator (383) coupled to a gate of the FET, the comparator configured to receive as inputs: a) a signal representative of an input voltage (VDRV) applied to the FET; b) a ground (GND); c) a boot signal representative of a voltage at the anode of the capacitor (BOOT); and d) a signal representative of a voltage at the source of the first GaN FET (SW).