发明名称 |
HIGH CAPACITANCE DENSITY METAL-INSULATOR-METAL CAPACITORS |
摘要 |
<p>This disclosure provides systems, methods and apparatus comprising high capacitance density metal-insulator-metal capacitors. In one aspect, an apparatus includes a first base metal layer (1004) on a first side of a substrate (1002). A first polymer layer (1012) is disposed on the first base metal layer and on the first side of the substrate. The first polymer layer defines a first plurality of vias (1014) though the first polymer layer, the first plurality of vias exposing portions of the first base metal layer. A first electrode layer (1016) is disposed on the first polymer layer. The first electrode layer contacts the portions of the first base metal layer. A first dielectric layer (1020) is disposed on the first electrode layer. A second electrode layer (1024) is disposed on the first dielectric layer. The first dielectric layer electrically isolates the first electrode layer from the second electrode layer.</p> |
申请公布号 |
WO2013138029(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
WO2013US26882 |
申请日期 |
2013.02.20 |
申请人 |
QUALCOMM MEMS TECHNOLOGIES, INC. |
发明人 |
LASITER, JON BRADLEY;SHENOY, RAVINDRA V.;BLACK, JUSTIN PHELPS;KIDWELL, DONALD WILLIAM |
分类号 |
H01L49/02;H01L23/522;H01L23/64 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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