发明名称 HIGH CAPACITANCE DENSITY METAL-INSULATOR-METAL CAPACITORS
摘要 <p>This disclosure provides systems, methods and apparatus comprising high capacitance density metal-insulator-metal capacitors. In one aspect, an apparatus includes a first base metal layer (1004) on a first side of a substrate (1002). A first polymer layer (1012) is disposed on the first base metal layer and on the first side of the substrate. The first polymer layer defines a first plurality of vias (1014) though the first polymer layer, the first plurality of vias exposing portions of the first base metal layer. A first electrode layer (1016) is disposed on the first polymer layer. The first electrode layer contacts the portions of the first base metal layer. A first dielectric layer (1020) is disposed on the first electrode layer. A second electrode layer (1024) is disposed on the first dielectric layer. The first dielectric layer electrically isolates the first electrode layer from the second electrode layer.</p>
申请公布号 WO2013138029(A1) 申请公布日期 2013.09.19
申请号 WO2013US26882 申请日期 2013.02.20
申请人 QUALCOMM MEMS TECHNOLOGIES, INC. 发明人 LASITER, JON BRADLEY;SHENOY, RAVINDRA V.;BLACK, JUSTIN PHELPS;KIDWELL, DONALD WILLIAM
分类号 H01L49/02;H01L23/522;H01L23/64 主分类号 H01L49/02
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