发明名称 |
DOPING DEVICE AND DOPING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which provides a doping device adding oxygen and improves electric characteristics.SOLUTION: A doping device includes: a gas introduction part into which an inactive gas is introduced; an arc chamber having a filament generating thermal electrons; a first electrode extracting ions of the inactive gas that is ionized by the arc chamber; a second electrode accelerating the ions of the inactive gas that is extracted by the first electrode; an oxygen ion supply part supplying oxygen ions to a region where the ions of the inactive gas, which are accelerated by the second electrode, pass; and a sample chamber into which the ions of the inactive gas and the oxygen ions are introduced. |
申请公布号 |
JP2013187431(A) |
申请公布日期 |
2013.09.19 |
申请号 |
JP20120052431 |
申请日期 |
2012.03.09 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ITO DAIGO |
分类号 |
H01L21/265;H01J27/02;H01J27/08;H01J27/16;H01J37/08;H01J37/317 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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