发明名称 DOPING DEVICE AND DOPING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which provides a doping device adding oxygen and improves electric characteristics.SOLUTION: A doping device includes: a gas introduction part into which an inactive gas is introduced; an arc chamber having a filament generating thermal electrons; a first electrode extracting ions of the inactive gas that is ionized by the arc chamber; a second electrode accelerating the ions of the inactive gas that is extracted by the first electrode; an oxygen ion supply part supplying oxygen ions to a region where the ions of the inactive gas, which are accelerated by the second electrode, pass; and a sample chamber into which the ions of the inactive gas and the oxygen ions are introduced.
申请公布号 JP2013187431(A) 申请公布日期 2013.09.19
申请号 JP20120052431 申请日期 2012.03.09
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ITO DAIGO
分类号 H01L21/265;H01J27/02;H01J27/08;H01J27/16;H01J37/08;H01J37/317 主分类号 H01L21/265
代理机构 代理人
主权项
地址