| 摘要 |
PROBLEM TO BE SOLVED: To expand the range of material selection while enhancing productivity, in formation of a fine uneven pattern.SOLUTION: In the etching for forming a fine uneven pattern, a standing-wave Ls of light L is produced in a space above the processed surface of a substrate 4, and the processed surface is etched while supplying a mask material 20 consisting of atoms interacting with the standing-wave Ls to the processed surface through the standing-wave Ls. |
