SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a memory structure allowing continuous use of memory over many years with the constant read state being kept at power on, and a method for manufacturing the same.SOLUTION: A memory region comprises: a silicon substrate 11 having a high-voltage N well; a tunnel oxide film 18 provided on the silicon substrate 11; a protrusive memory floating gate 21 provided on the tunnel oxide film 18; an IPO oxide film 22 provided on the memory floating gate 21 and the tunnel oxide film 18; and a memory control gate 24 provided on the IPO oxide film 22 near the memory floating gate 21. A transistor region comprises: a substrate 17 having an N well; a gate oxide film 19 provided on the substrate 17; and a protrusive transistor gate 25 provided on the gate oxide film 19.