发明名称 Method and Apparatus for Inspecting a Mask Substrate for Defects, Method of Manufacturing a Photomask, and Method of Manufacturing a Semiconductor Device
摘要 According to one embodiment, a method of inspecting a mask substrate for defects, includes acquiring a defocus image of a partial region of a mask substrate using a dark-field optical system, acquiring a just-focus image of the partial region using the dark-field optical system, generating a set composed of first signals obtained from the defocus image and having signal intensities equal to or higher than a first threshold value, excluding, from the set, the first signals pertaining to parts in which signal intensities of signals obtained from the just-focus image are equal to or higher than a second threshold value, determining an inspection threshold value for signal intensities, on the basis of the first signals not excluded from, and remaining in, the sea.
申请公布号 US2013244142(A1) 申请公布日期 2013.09.19
申请号 US201313840489 申请日期 2013.03.15
申请人 KABUSHIKI KAISHA TOSHIBA;TSUNEO TERASAWA 发明人 YAMANE TAKESHI;TERASAWA TSUNEO
分类号 G01N21/956;G03F1/00 主分类号 G01N21/956
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